A new low-power, high-speed memory technology on the horizon could replace solid-state drives, hard drives and DRAM in PCs, and bring higher levels of storage capacity to mobile devices and wearables.
Samsung Electronics registered its sixth straight quarterly decline in profits in the first three months of this year as competition bit into its key smartphone and display businesses.
Researchers at Stanford University have come up with a new way to make chips and solar panels using gallium arsenide, a semiconductor that beats silicon in several important areas but is typically too expensive for widespread use.
Samsung Electronics has developed flash memory storage that could help bring 128GB capacity to smartphones and tablets in the middle and low end of the price spectrum.
SanDisk has managed to cram 200GB of memory into a MicroSD card. The new card is a 56 percent jump on the current highest capacity MicroSD, a 128GB card.
High-end smartphones could soon have 4GB of super-fast RAM, resulting in better multi-tasking and the ability to continuously shoot images with 20-megapixel cameras.
The contraction of the semiconductor industry continued with embedded chip and flash memory makers Cypress Semiconductor and Spansion announcing a merger plan worth $4 billion.
Novel molecules could help flash memory move beyond its storage limits, allowing for massive amounts of data to be recorded in small spaces, according to European scientists.
Intel plans to ship 3D NAND flash chips next year that will allow it to cram more bits into solid-state storage.
Everspin has signed up chip maker Global Foundries as a manufacturing partner for its next-generation MRAM (Magnetoresistive RAM) memory chips, in a development that should help the promising technology move toward mass production.
Just as graphics card makers like Nvidia found a secondary market for their wares as system-fortifying co-processors, Micron is plotting to sell booster computational elements based on its memory technologies.
Samsung has started producing 64GB DRAM modules for servers based on emerging DDR4 (double-data rate 4) memory using 3D "through silicon via" (TSV) package technology.
The hunt for memory technology to replace NAND flash storage within the next 10 years is under way, and startup Crossbar is planning to bringing its version of RRAM (resistive random-access memory) technology to market next year.
Micron wants to shake up decades-old memory implementations with its Hybrid Memory Cube technology, which will be available as an alternative to DRAM modules starting in the first quarter next year.
Hewlett-Packard's attempt to come up with a new architecture for computers is "laughable" and would make trillions of dollars in software investment obsolete, according to a top Dell executive.
Most Popular Reviews
- 1 LG 65-inch UHD TV (65UF950T) review
- 2 Playing chicken with a Tesla Model S
- 3 Audi TT (2015) review: A smarter take on the sports coupe
- 4 Microsoft Lumia 640 review: Honouring Nokia's legacy
- 5 Apple Watch review: saving time
Join the Good Gear Guide newsletter!
Deals on Good Gear Guide
- Networking, Wireless & VoIP
Deals on Good Gear Guide
Latest News Articles
- OpenSSL tells users to prepare for a high severity flaw
- Nvidia attempts to ease the path to deep learning
- FBI chief warns that terrorists hide behind encrypted communications
- Privacy group files FTC complaint to push Google to extend right to be forgotten to US
- US judge dimisses second conviction of ex-Goldman Sachs coder
GGG Evaluation Team
First impression on unpacking the Q702 test unit was the solid feel and clean, minimalist styling.
- FTPR & Corporate Affairs ManagerNSW
- FTMedia and Communications AdvisorACT
- CCSenior Drupal DeveloperNSW
- FTAccount Manager - PR AgencyNSW
- FTTechnical Sales Support Representative - The Worlds largest Search Engine!NSW
- CCDrupal DeveloperNSW
- CCInternal Communications ExecutiveNSW
- CCInternal Communications AdvisorNSW
- FTSenior Account Manager - PR AgencyNSW