Samsung Electronics has begun mass production of 256-gigabit 3D vertical NAND (V-NAND) flash memories, clearing the way for higher-capacity memory that doesn't take up more room.
Lackluster demand for its flagship Galaxy S6 smartphone and higher marketing costs led Samsung Electronics to another quarter of falling sales and profits in the April to June period.
The 3D XPoint memory technology that Intel and Micron announced Tuesday is new to its core and took years to develop, but that work may pay dividends in both living rooms and data centers.
To fill computers' voracious appetite for data, Intel and Micron say they've developed the first new kind of memory since NAND flash was introduced in 1989.
A new low-power, high-speed memory technology on the horizon could replace solid-state drives, hard drives and DRAM in PCs, and bring higher levels of storage capacity to mobile devices and wearables.
Samsung Electronics registered its sixth straight quarterly decline in profits in the first three months of this year as competition bit into its key smartphone and display businesses.
Researchers at Stanford University have come up with a new way to make chips and solar panels using gallium arsenide, a semiconductor that beats silicon in several important areas but is typically too expensive for widespread use.
Samsung Electronics has developed flash memory storage that could help bring 128GB capacity to smartphones and tablets in the middle and low end of the price spectrum.
SanDisk has managed to cram 200GB of memory into a MicroSD card. The new card is a 56 percent jump on the current highest capacity MicroSD, a 128GB card.
High-end smartphones could soon have 4GB of super-fast RAM, resulting in better multi-tasking and the ability to continuously shoot images with 20-megapixel cameras.
The contraction of the semiconductor industry continued with embedded chip and flash memory makers Cypress Semiconductor and Spansion announcing a merger plan worth $4 billion.
Novel molecules could help flash memory move beyond its storage limits, allowing for massive amounts of data to be recorded in small spaces, according to European scientists.
Intel plans to ship 3D NAND flash chips next year that will allow it to cram more bits into solid-state storage.
Everspin has signed up chip maker Global Foundries as a manufacturing partner for its next-generation MRAM (Magnetoresistive RAM) memory chips, in a development that should help the promising technology move toward mass production.
Just as graphics card makers like Nvidia found a secondary market for their wares as system-fortifying co-processors, Micron is plotting to sell booster computational elements based on its memory technologies.
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